Bhubaneswar: Odisha is set to host a large-scale silicon carbide semiconductor manufacturing unit after the Unit Approval Committee of the Falta Special Economic Zone gave the green light to SiCSem Private Limited’s ambitious project.
According to reports, the company will invest Rs 3,406.25 crore to set up an integrated facility at the ESDM Park in Info Valley-II on the outskirts of Bhubaneswar. The project will come up on nearly 22 acres of land and was one of the two semiconductor proposals cleared for the state under the India Semiconductor Mission last year. Once operational, the plant will handle the complete manufacturing chain — from fabrication to assembly, testing, marking and packaging — of silicon carbide (SiC) devices. It will produce high-performance SiC diodes and SiC MOSFETs, components that are in growing demand for applications requiring superior power efficiency, high-temperature tolerance and rapid switching.
The facility is designed to manufacture 4.8 million SiC diodes and 91.2 million SiC MOSFETs every year. Industry observers say the project will significantly enhance India’s capabilities in the specialised power semiconductor segment and help reduce reliance on imports.
The approval marks an important step in Odisha’s push to emerge as a key player in the country’s semiconductor ecosystem.
